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Compositional gradients and impurity distributions in CuInSe2 thin‐film solar cells studied by atom probe tomography

Identifieur interne : 000493 ( Main/Exploration ); précédent : 000492; suivant : 000494

Compositional gradients and impurity distributions in CuInSe2 thin‐film solar cells studied by atom probe tomography

Auteurs : Pyuck-Pa Choi [Allemagne] ; Oana Cojocaru-Mirédin [Allemagne] ; Roland Wuerz [Allemagne]

Source :

RBID : ISTEX:65B0F39138202B1D36B9BF3A7D991A9529561CE9

English descriptors

Abstract

The present study is about the characterization of CuInSe2 thin‐film solar cells using atom probe tomography. Elemental distributions, in particular compositional gradients and impurity segregation at internal interfaces, have been determined at the sub‐nanometer scale. Direct evidence of impurity (Cd, Na, and O) segregation at CuInSe2 grain boundaries is given. Possibly occurring point defects are discussed with respect to their influence on the electronic properties and the efficiency of the solar cells. Copyright © 2012 John Wiley & Sons, Ltd.

Url:
DOI: 10.1002/sia.4948


Affiliations:


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<term>Band structure</term>
<term>Cahen</term>
<term>Choi</term>
<term>Compositional</term>
<term>Compositional gradient</term>
<term>Copyright</term>
<term>Cuinse2</term>
<term>Cuinse2 solar cell</term>
<term>Dark blue</term>
<term>Donor defect</term>
<term>Doping</term>
<term>Effective doping</term>
<term>Electronic property</term>
<term>Elemental distribution</term>
<term>Grain boundary</term>
<term>Grain boundary composition</term>
<term>Grey background</term>
<term>Heske</term>
<term>Impurity</term>
<term>Impurity distribution</term>
<term>Impurity segregation</term>
<term>Interface</term>
<term>Interface anal</term>
<term>Internal interface</term>
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<term>Lett</term>
<term>Light blue</term>
<term>Phys</term>
<term>Point defect</term>
<term>Present study</term>
<term>Proximity histogram</term>
<term>Slight enrichment</term>
<term>Solar cell</term>
<term>Tomography</term>
<term>Wuerz</term>
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