Compositional gradients and impurity distributions in CuInSe2 thin‐film solar cells studied by atom probe tomography
Identifieur interne : 000493 ( Main/Exploration ); précédent : 000492; suivant : 000494Compositional gradients and impurity distributions in CuInSe2 thin‐film solar cells studied by atom probe tomography
Auteurs : Pyuck-Pa Choi [Allemagne] ; Oana Cojocaru-Mirédin [Allemagne] ; Roland Wuerz [Allemagne]Source :
- Surface and Interface Analysis [ 0142-2421 ] ; 2012-11.
English descriptors
- Entity :
- org : Cameca Instruments, DFG, German Research Foundation.
- pers : John Wiley, O. Cojocaru-Mirédin, P. Choi, R. Wuerz, Roland Wuerzb, Wolfram Witte.
- place : France, Germany.
- Teeft :
- Appl, Atom probe tomography, Band structure, Cahen, Choi, Compositional, Compositional gradient, Copyright, Cuinse2, Cuinse2 solar cell, Dark blue, Donor defect, Doping, Effective doping, Electronic property, Elemental distribution, Grain boundary, Grain boundary composition, Grey background, Heske, Impurity, Impurity distribution, Impurity segregation, Interface, Interface anal, Internal interface, John wiley son, Lett, Light blue, Phys, Point defect, Present study, Proximity histogram, Slight enrichment, Solar cell, Tomography, Wuerz.
Abstract
The present study is about the characterization of CuInSe2 thin‐film solar cells using atom probe tomography. Elemental distributions, in particular compositional gradients and impurity segregation at internal interfaces, have been determined at the sub‐nanometer scale. Direct evidence of impurity (Cd, Na, and O) segregation at CuInSe2 grain boundaries is given. Possibly occurring point defects are discussed with respect to their influence on the electronic properties and the efficiency of the solar cells. Copyright © 2012 John Wiley & Sons, Ltd.
Url:
DOI: 10.1002/sia.4948
Affiliations:
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Le document en format XML
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<front><div type="abstract">The present study is about the characterization of CuInSe2 thin‐film solar cells using atom probe tomography. Elemental distributions, in particular compositional gradients and impurity segregation at internal interfaces, have been determined at the sub‐nanometer scale. Direct evidence of impurity (Cd, Na, and O) segregation at CuInSe2 grain boundaries is given. Possibly occurring point defects are discussed with respect to their influence on the electronic properties and the efficiency of the solar cells. Copyright © 2012 John Wiley & Sons, Ltd.</div>
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